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 UNISONIC TECHNOLOGIES CO., LTD N5027
HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR
FEATURES
* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA
NPN SILICON TRANSISTOR
1
TO-220
1
TO-220F
*Pb-free plating product number: N5027L
ORDERING INFORMATION
Order Number Normal Lead Free Plating N5027-x-TA3-F-T N5027L-x-TA3-F-T N5027-x-TF3-F-T N5027L-X-TF3-F-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube
N5027L-x-TA3-F-T (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) T: Tube (2) refer to Pin Assignment (3) TA3: TO-220, TF3: TO-220F (4) x: refer to Classificationof hFE1 (5) L: Lead Free Plating Blank: Pb/Sn ,
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (Tc = 25 )
NPN SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Peak Collector Consume Dissipation PC 50 W Peak Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25 , unless otherwise specified.)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEX(SUS) L=2mH, Clamped ICBO VCB=800V, IE=0 IEBO VEB=5V, IC=0 hFE 1 VCE=5V, IC=0.2A hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tSTG RL=200 tF MIN 850 800 7 800 10 10 40 1.1 1.5 60 15 0.5 3 0.3 V V pF MHz s s s TYP MAX UNIT V V V V
10 6
CLASSIFICATION of hFE1
RANK RANGE N 10 ~ 20 R 15 ~ 30 O 20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Static Characteristic Collector Current vs. Collector-Emitter Voltage 4.0 3.6
Collector Current, IC (A)
DC Current Gain vs. Collector Current 1000 VCE=5V
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 8
IB=10mA IB=50mA IB=150 mA IB=100 mA
DC Current Gain, hFE
100
10
9
10
1 0.01
100us 0.1
1ms 1 10
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (A)
Saturation Voltage vs. Collector Current 10
Saturation Voltage, VCE(SAT) (V)
Collector Current vs. Base-Emitter Voltage 4.0
Ic=5IB 3.5 Collector Current, Ic (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.01 100us 0.1 1ms 1 10 0.0 0.0 0.2 0.4 0.6 0.8
VCE=5V
1
0.1
1.0
1.2
Collector Current, IC (A)
Base-Emitter Voltage, VBE (V)
Switching Time Time vs. Collector-Emitter Voltage 10
Vcc=400V 5.IB1= - 2.5.I B2=Ic
Safe Operating Area Collector Current vs. Collector-Emitter Voltage 100
IcMAX.(Pulse)
s)
10
Collector Current, Ic (A)
IcMAX.(Continuous )
ms 10
0 10 s 1m
TIME, tON, tstg, tF
1
s
1
C D
0.1
0.1
0.01
0.01 0.1
1ms 1 Collector-Emitter Voltage, VCE (V) 10
1E-s 1 10 100 1000 10000
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area Collector Current vs. Collector-Emitter Voltage 100
I B2=-0.3A
NPN SILICON TRANSISTOR
Power Derating Power Dissipation vs. Case Temperature 80 70
10
Power Dissipation, Pc (W)
100us 100 1ms 1000 10000
Collector Current, Ic (A)
60 50 40 30 20 10
1
0.1
0.01 10
0 0 25 50 75 100 125 150 175
Collector-Emitter Voltage, VCE (V)
Case Temperature, TC ( )
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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